Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Gui Gen Wang; Ming Fu Zhang; Hong Bo Zuo; Xiao Dong He; Jie Cai Han; Grigoryan Benik; Cheng Hai Xu; Tai Yao

doi:10.4028/www.scientific.net/KEM.353-358.1521

Paper Titles

BBPPAmorphous Si-B-C-N Ceramics Fabricated by High Energy Ball Milling and Hot Pressing
p.1505

Internal Friction of a 2D-C/SiC Composite from 25°C to 400°C
p.1509

Electrically Nonlinear Fracture Analysis of Piezoelectric Materials Based on CED (Crack Energy Density)
p.1513

Synthesis and Properties of AlN-SiC-TiB₂ Ceramics by SHS-HIP
p.1517

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method
p.1521

In Situ Toughened α-Sialon Ceramics Doped with Lutecia and Ytterbia
p.1525

Influence of Nano-Silica on Microstructure and Mechanical Properties of SiO₂/BN Ceramics
p.1529

Microstructures of ZrO₂(3Y) Ceramics after Dynamic Impact
p.1533

Glass-Forming Ability, Interface Joint Strength and Thermal Properties of Sealing Glasses for SOFC
p.1536

HomeKey Engineering MaterialsKey Engineering Materials Vols. 353-358Investigation on Large-Sized Sapphire Crystalline...

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Abstract:

The large-sized sapphire (Ø225×205 mm, 27.5 kg) was grown successfully by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). The surface quality of the specimens was characterized by micro-Raman spectroscopy, and double crystal X-ray diffractometry (DCD) was utilized to investigate its crystalline perfection. The measurement of rocking curves was performed on various specimens from different region of large sapphire boule. The experimental results showed that CMP (chemo-mechanical polishing) with subsequent suitable chemically etching can develop the best-quality sapphire crystal surface and the values of FWHM obtained by conventional DCD were in the range from 27” to 58”. The infrared spectral transmission (2.0-4.5 5m) of sapphire crystal exceeded 82%. It is confirmed of SAPMAC growth method characteristics with in-situ annealing, small temperature gradient and low residual stress level by numerical simulation analysis.

You might also be interested in these eBooks

Progresses in Fracture and Strength of Materials and Structures

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 353-358)

Pages:

1521-1524

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.353-358.1521

Citation:

Cite this paper

Online since:

September 2007

Authors:

Gui Gen Wang, Ming Fu Zhang, Hong Bo Zuo, Xiao Dong He, Jie Cai Han, Grigoryan Benik, Cheng Hai Xu, Tai Yao

Keywords:

Double Crystal Diffraction, Raman Spectrum, SAPMAC Method, Sapphire

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] P. Capper: Bulk Crystal Growth in Electronic, Optical and Optoelectronic Materials (John Wiley & Sons Inc Publications, American 2005).

Google Scholar

[2] F. Schmid, C.P. Khattak, H.H. Rogers and D.M. Felt: SPIE Vol. 3705 (1999), p.70.

Google Scholar

[3] J.B. Camp, G. Billingsley and W. Kells: SPIE Vol. 4679 (2002), p.1.

Google Scholar

[4] R.A. Laudise: Crystal Growth and Characterization, edited by R. Ueda and J.B. Mullin, North-Holland, Amsterdam (1975).

Google Scholar

[5] Krishan Lal, R.V. Anantha Murthy, Ashutosh Choubey, and N. Goswami: Crystal Growth Technology, edited by K. Byrappa and T. Ohachi, William Andrew Inc., Norich, NY (2003).

Google Scholar

[6] J.C. Han, H.B. Zuo, S.H. Meng and M.F. Zhang, Patent CN200510010116. 4 (2006).

Google Scholar

[7] Y.Z. Wang, S.L. Liu, S.M. Zhou and J. Xu: J. Cryst. Growth Vol. 274 (2005), p.241.

Google Scholar

[8] D. Black, R. Polvani, L. Braun, B. Hockey and G. White: SPIE Vol. 3060 (1997), p.102.

Google Scholar

[9] C.J. Karr: Infrared and Raman Spectroscopy of Lunar and Terrestrial Mineral (Academic Press, New York 1975).

Google Scholar

[10] K. Lai: Key Engineering Materials Vol. 58 (1991), p.205.

Google Scholar

[11] R. Kumaresan, R. Gopalakrishnan, S.M. Babu, P. Ramansamy, P. Zaumseil and M. Ichimura: J. Cryst. Growth Vol. 210 (2000), p.193.

Google Scholar

[12] C.H. Xu, H.B. Zuo, S.Y. Du, S.H. Meng, J.C. Han, G. G Wang and M. F Zhang: J. Synth. Cryst 35 (2006).

Google Scholar