Paper Titles

Perturbed Angular Correlation Spectroscopy – A Tool for the Study of Defects and Diffusion at the Atomic Scale
p.3

Impurities in Magnetic Materials Studied by PAC Spectroscopy
p.39

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and Ab Initio Calculations
p.62

Can PAC Measurements be Used to Investigate Defects in Nano-Structures?
p.105

TiO₂ Nanomaterials Studied by ⁴⁴Ti(EC)⁴⁴Sc Time Differential Perturbed Angular Correlations: Volume and Surface Properties
p.137

Comparison of Jump Frequencies of ¹¹¹In/Cd Tracer Atoms in Sn₃R and In₃R Phases Having the L1₂ Structure (R = Rare-Earth)
p.159

Implanted Impurities in Wide Band Gap Semiconductors
p.167

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 311Implanted Impurities in Wide Band Gap...

Implanted Impurities in Wide Band Gap Semiconductors

Article Preview

Abstract:

Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices. Especially the synthesis of InxGa1-xN alloys has been studied extensively because of their use in LEDs and laser diodes. Here, In is added during the growth process and devices are already very successful on a commercial scale. Indium in nitride ternary and quaternary alloys plays a special role; however, the mechanisms leading to more efficient light emission in In-containing nitrides are still under debate. Therefore, the behaviour of In in GaN and AlN, the nitride semiconductor with the largest bandgap is an important field of study. In is also an important impurity in another wide band gap semiconductor – the II-VI compound ZnO where it acts as an n-type dopant. In this context the perturbed angular correlation technique using implantation of the probe ¹¹¹In is a unique tool to study the immediate lattice environment of In in the wurtzite lattice of these wide band gap semiconductors. For the production of GaN and ZnO based electronic circuits one would normally apply the ion implantation technique, which is the most widely used method for selective area doping of semiconductors like Si and GaAs. However, this technique suffers from the fact that it invariably produces severe lattice damage in the implanted region, which in nitride semiconductors has been found to be very difficult to recover by annealing. The perturbed angular correlation technique is employed to monitor the damage recovery around implanted atoms and the properties of hitherto known impurity – defect complexes will be described and compared to proposed structure models.

By email Full Text Pdf

You might also be interested in these eBooks

Defects and Diffusion Studied Using PAC Spectroscopy

Info:

Periodical:

Defect and Diffusion Forum (Volume 311)

Pages:

167-179

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.311.167

Citation:

Cite this paper

Online since:

March 2011

Authors:

P. Keßler, K. Lorenz, R. Vianden

Keywords:

Annealing Behaviour, Gallium Nitride (GaN), II-VI Compounds, Nitride Semicoductors, PAC, Zinc Oxide (ZnO)

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

[1] M. Zacate and H. Jaeger: present volume.

[2] Ioffe Institute, St. Petersburg, http: /www. ioffe. rssi. ru/SVA/NSM.

[3] E.H. Kisi and M.M. Elcombe: Acta Cryst. C Vol. 45 (1989), p.1867.

[4] J.E. Jaffe and A.C. Hess: Phys. Rev. B Vol. 48 (1993), p.7903.

[5] L. Gerward and J.S. Olsen: J. Synchrotron Radiat. Vol. 2 (1995), p.233.

[6] D.R. Lide (Ed. ): CRC Handbook of Chemistry and Physics, 73rd Edition (CRC Press, New York, 1992).

[7] S. Adachi, Properties of Group-IV, III-V and II-VI Semiconductors (John Wiley and Sons, Ltd, West Sussex, England, 2005).

[8] K. P. O'Donnell, R. W. Martin, and P. G. Middleton: Phys. Rev. Lett. Vol. 82 (1999), p.237.

[9] T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu: Appl. Phys. Lett. Vol. 86 (2005), p.151918.

DOI: 10.1063/1.1900947

[10] F. A. Ponce , S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, S. Tanaka: Phys. Status Solidi B Vol. 240 (2003), p.273.

DOI: 10.1002/pssb.200303527

[11] A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze: Phys. Rev. Lett. Vol. 95 (2005), p.127402.

[12] S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota: Nature Materials Vol. 5 (2006).

DOI: 10.1038/nmat1726

[13] V. Kachkanov, K. P. O'Donnell, S. Pereira, R. W. Martin: Philosophical Magazine Vol. 87 (2007), p. (1999).

[14] C. Ronning, M. Dalmer, M. Deicher, M. Restle, M.D. Bremser, R.F. Davis, H. Hofsäss: Mat. Res. Soc. Symp. Proc. Vol. 468 (1997), p.407.

DOI: 10.1557/proc-468-407

[15] A. Burchard, E.E. Haller, A. Stötzler, R. Weissenborn, M. Deicher, and the ISOLDE Collaboration: Physica B Vol. 273/274 (1999), p.96.

DOI: 10.1016/s0921-4526(99)00415-9

[16] K. Lorenz, F. Ruske, and R. Vianden: Phys. Stat. Sol. (b) Vol. 228 (2001), p.331.

[17] J. Bartels, K. Freitag, J.G. Marques, J.C. Soares and R. Vianden: Hyperfine Interact. Vol. 120/121 (1999), p.397.

DOI: 10.1023/a:1017080902893

[18] K. Lorenz, PhD thesis, University of Bonn (2002).

[19] K. Lorenz, R. Vianden: Phys. Stat. Sol. (c) Vol. 1 (2002), p.413.

[20] J. Schmitz, J. Niederhausen, J. Penner, K. Lorenz, E. Alves, R. Vianden: Physica B Vol. 404 (2009), p.4866.

DOI: 10.1016/j.physb.2009.08.181

[21] P. J. M. Smulders, D.O. Boerma: Nucl. Instrum. Methods Phys. Res. B Vol. 29 (1987), p.471.

[22] R. Dogra, S.K. Shrestha, A.P. Byrne, M.C. Ridgway, A.V.J. Edge, R. Vianden, J. Penner, and H. Timmers: J. Phys.: Condens. Matter Vol. 17 (2005), p.6037.

DOI: 10.1088/0953-8984/17/38/009

[23] D. Forkel, PhD thesis, University of Erlangen (1987).

[24] F.D. Feiock and W.R. Johnson: Phys. Rev. Vol. 187 (1969), p.39.

[25] R. M. Sternheimer: Bull. Amer. Phys. Soc. Vol. 12 (1967), p.108.

[26] H. Granzer, H. H. Bertschat, H. Haas, W. -D. Zeitz, J. Lohmüller, and G. Schatz: Phys. Rev. Lett Vol. 77 (1996), p.4261.

DOI: 10.1103/physrevlett.77.4261

[27] Value for Br taken from E.G. Wikner and T.P. Das: Phys. Rev. B Vol. 109 (1958), p.360.

[28] P. Herzog, K. Freitag, M. Reuschenbach, and H. Walitzki: Z. Phys. A Vol. 294 (1980), p.13.

[29] K. Lorenz, F. Ruske, and R. Vianden: Appl. Phys. Lett. Vol. 80 (2002), p.4531.

[30] C.M. Lederer and V.A. Shirley (Ed. ): Table of Isotopes 7th edition (J. Wiley, New York, 1980).

[31] M. Dietrich, M. Deicher, A. Stotzler, R. Weissenborn and the ISOLDE collaboration: Nucl. Phys. A Vol. 701 (2002), p.240.

[32] T. Butz and A. Lerf: Phys. Lett. Vol. 97A (1987), p.217.

[33] K. Lorenz, T. Geruschke, E. Alves and R. Vianden: Hyperfine Interact., Vol. 177 (2007), p.89.

[34] R. Nédélec, R. Vianden and the ISOLDE Collaboration: Hyperfine Interact. Vol. 178 (2007), p.19.

[35] R.E.J. Sears: Phys. Rev. B Vol. 22 (1980), p.1135.

[36] Woo-Sik Jung, Oc Hee Han, Seen-Ae Chae: Materials Letters Vol. 61 (2007), p.3413.

[37] H. Wolf, S. Deubler, D. Forkel, H. Foettinger, M Iwatschenko-Borho, F. Meyer, M. Renn, W. Witthuhn, and R. Helbig: Materials Science Forum, Vol. 10-12 (1986), p.863.

DOI: 10.4028/www.scientific.net/msf.10-12.863

[38] S. Deubler, J. Meier, R. Schütz, and W. Witthuhn : Nuc. Instr. Meth. B Vol. 63 (1992), p.223.

[39] R. Dogra, A.P. Byrne, M. C Ridgway: Optical Materials Vol. 31 (2009), p.1443.

[40] E. Rita, J. G. Correia, U. Wahl, E. Alves, A.M.L. Lopes, and J.C. Soares, and the ISOLDE collaboration: Hyperfine Interact. Vol. 158 (2004), p.395.

DOI: 10.1007/s10751-005-9065-8

[41] This work.

[42] Th. Geruschke, Bonn, private communication.

[43] R. Nédélec, R. Vianden, and the ISOLDE Collaboration : Optical Materials Vol. 28 (2006), p.723.

[44] C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsäss, T. Gehrke, K. Järrendahl, R. F. Davis, and the ISOLDE Collaboration : J. Appl. Phys. Vol. 87 (2000), p.2149.

DOI: 10.1063/1.372154

[45] R. Vianden in Nuclear Physics Applications in Materials Science edited by. E. Recknagel and J.C. Soares, NATO ASI series, series E Vol. 144 (1988), p.239, and Th. Wichert, Semiconductors and Semimetals Vol. 51B (1999), p.297.

[46] R.D. Shannon and C.T. Prewitt: Acta Cryst. B Vol. 25 (1969), p.925.

[47] F. De Wette: Phys. Rev. Vol. 123 (1961), p.103.

[48] K. Lorenz and R. Vianden: Hyperfine Interact. Vol. 158 (2004), p.273.

[49] C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis: Phys. Rev. B Vol. 54 (1996), p.17745.

DOI: 10.1103/physrevb.54.17745

[50] J. Christiansen, P. Heubes, R. Keitel, W. Klinger, W. Loeffler, W. Sandner, and W. Witthuhn: Z. Phys. B Vol. 24 (1976), p.177.

DOI: 10.1007/bf01312998

[51] P. Erhart N. Juslin, O. Goy, K. Nordlund, R. Müller, and K. Albe, J. Phys.: Condens. Matter Vol. 18 (2006), p.6585.

DOI: 10.1088/0953-8984/18/29/003

[52] G. Denninger and D. Reiser: Phys. Rev B Vol. 55 (1997), p.5073.

[53] M. Corti, A. Gabetta, M. Fanciulli, A. Svane, and N. E. Christensen: Phys. Rev B Vol. 67 (2003), p.64416.