Tunneling Recombination Mechanism in n-Type a-Si:H Steady State Regime

Tobbeche Souad; Amar Merazga

doi:10.4028/www.scientific.net/AMR.774-776.816

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Tunneling Recombination Mechanism in n-Type a-Si:H...

Tunneling Recombination Mechanism in n-Type a-Si:H Steady State Regime

Abstract:

In this paper we developed a recombination model for the steady state photoconductivity (SSP) with the assumption that the correlated dangling bond states (DB) act as the essential recombination centres and the electron recombination proceeds by tunneling from the conduction band tail states (TS) for n-type a-Si:H. The modeled temperature dependence of the SSP presents the main measured features, particularly the small activation energy and the thermal quenching.

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Periodical:

Advanced Materials Research (Volumes 774-776)

Pages:

816-823

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.774-776.816

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Online since:

September 2013

Authors:

Tobbeche Souad, Amar Merazga

Keywords:

a-Si:H, DOS, Recombination, Steady State Photoconductivity, Tunneling

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