New Laser Cutting Technology of Sapphire Wafers on Crystals

Vladimir Stepanovich Kondratenko; Vladimir Yevgenievich Borisovskiy; Alexander Sergeevich Naumov

doi:10.4028/www.scientific.net/AMR.660.30

Paper Titles

Two-Photon Absorption Photochromic Optical Image Storage in Indoly-Benzylfulgimide/PMMA Film
p.10

Optical Characterization of Thiophene Blending with Non-Conjugated Polymer at Different Composition
p.15

Characterization of Poly(N-vinlycarbazole) Blending with Different Composition by Using Polarized Electronic Spectroscopy
p.19

Optical Storage Properties of Different Fulgides
p.24

New Laser Cutting Technology of Sapphire Wafers on Crystals
p.30

Theoretical Studies on the Electronic Structures and Spectral Properties of Two Iridium(III) Complexes with Tetraphenylimidodiphosphinate Ligand
p.35

A Comparative Analysis of Ytterbium-Erbium Media for 1.5 μm Lasers
p.40

Optical Properties of Diamond-Like Carbon Films Modified by Platinum
p.47

Autocatalytic Photo-Oxidation Process of C₃-C₄Fraction to Methanol
p.51

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 660New Laser Cutting Technology of Sapphire Wafers on...

New Laser Cutting Technology of Sapphire Wafers on Crystals

Abstract:

The work is devoted to development of new cutting technology of semiconductor wafers on crystals by a method of laser controlled thermocracking. There are results of numerical and experimental researches of the cut sapphire wafers on crystals for light-emitting diodes by means of two lasers (СО2 laser and UV laser).

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Periodical:

Advanced Materials Research (Volume 660)

Pages:

30-34

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.660.30

Citation:

Cite this paper

Online since:

February 2013

Authors:

Vladimir Stepanovich Kondratenko, Vladimir Yevgenievich Borisovskiy, Alexander Sergeevich Naumov

Keywords:

Laser Controlled Thermocracking (LCT), Light-Emitting Diodes (LED), Sapphire, UV Laser, СО₂ Laser

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References

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