Micro Structures and Mechanical Characters of Hydrogenated Nanocrystalline Silicon Thin Films with Different Doped Proportions

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Hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited on glass substrates using Radio frequency plasma-enhanced chemical vapor deposition(RF-PECVD)from a B2H6/SiH4/H2 gas mixtures. In this paper, we mainly changed the Borane-Silane flow rate ratio (β), while other parameters were kept constant. Raman spectrum and X-ray diffraction were employed to investigate the micro-structure of the films, and the indentations were used to measure the mechanical characters (the Young’s modulus (E) and hardness (H)). The Raman spectrum showed that, withβincreasing the crystalline fraction decreased, which indicated that more boron doped might not be propitious to the formation of crystalline of the thin films. XRD spectrum revealed that the films have a remarkably preferential orientation. The analysis of the Young’s modulus and hardness by TriboIndenter nano system suggested that the increase inβhad concernful effects in the decrease of E and H values, so we can control the mechanical characters of the thin films by means of changing the doped concentrations. In view of these results, it may be concluded that the use of lowβconditions might lead to growth of nc-Si:H films with high crystallinity, and as well high Young’s modulus and hardness.

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53-56

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December 2010

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[1] P. Kumar, F. Zhu, A. Madan: International Journal of Hydrogen Energy, Vol. 33 (2008), p.3938.

Google Scholar

[2] A. Chowdhury, S. Mukhopadhyay, S. Ray: Solar Energy Materials & Solar Cells, Vol. 92 (2008), p.385.

Google Scholar

[3] S. H. Qiu, C. Z. Chen, C. Q. Liu, etc: Chin. Phys. Soc. Vol. 58 (2009), p.565.

Google Scholar

[4] A. Cavallini, D. Cavalcoli, M. Rossi, etc: Physical B, Vol. 401(2007), p.519.

Google Scholar

[5] Y. Chen, S. Wagner: Appl. Phys. Lett, Vol. 75(8)(1999), p.1125.

Google Scholar

[6] S. Nishida, M. Konagai, K. Takahashi: Thin Solid Films, Vol. 112 (1984), p.7.

Google Scholar

[7] W. C. Oliver, G. M. Pharr: J. Mater. Res., Vol. 7 (6) (1992), p.1564.

Google Scholar

[8] J. H. Ahn, K won D: Materials Science and Engineering, Vol. A285 (2000), p.172.

Google Scholar

[9] W. C. Oliver, G. M. Pharr: J. Mater. Res. Vol. 19 (1) (2004), p.3.

Google Scholar

[10] R. Tsu, J. Gonzalez-Hernandez, S. S. Chao, etc: Appl. Phys. Lett. Vol. 40 (1982), p.534.

Google Scholar

[11] E. Bustarret, M. A. Hachicha, M. Brunel: Appl. Phys. Lett. Vol. 52 (20) (1988), p.1675.

Google Scholar

[12] M. Ledinský, L. Fekete, J. Stuchlík, etc: J. Non-Cryst. Solids Vol. 352 (2006), p.1209.

Google Scholar

[13] P. Alpuim, M. Andrade, V. Sencadas, etc: Thin Solid Films, Vol. 515 (2007), p.7658.

Google Scholar

[14] J. N. Ding,H. S. Qi, N.Y. Yuan, etc: Nanotechnology and Precision Engineering, Vol. 7(2009), p.106.

Google Scholar