Measurement of Dislocation Density in SiC Wafers Using Production XRT

Andrey Soukhojak; Tyler Stannard; Ian Manning; Charles Lee; Gil Chung; Matthew Gave; Edward Sanchez

doi:10.4028/p-37781z

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Measurement of Dislocation Density in SiC Wafers...

Measurement of Dislocation Density in SiC Wafers Using Production XRT

Abstract:

X-ray topography (XRT) presents itself as an attractive non-destructive method to replace industry-standard destructive KOH etching used to measure dislocation density. However, a production-line-compatible XRT has to employ a low scan speed in order to work well with automated image analysis, which makes it impractical for a high-volume manufacturing to scan an entire wafer. We introduce the “radial band” approach to sampling the entire wafer’s area with a single-pass 16 mm tall scan band. Such a band spans the entire range of radii and thus captures the typically strong radial dependence of dislocation density over the entire range, while mostly ignoring the typically weak angular dependence of dislocation density and averaging the inevitable noise over the 16 mm band height. The XRT scan time savings for this approach are roughly 15-fold and 20-fold for 150mm and 200mm wafers respectively.

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

304-308

DOI:

https://doi.org/10.4028/p-37781z

Citation:

Cite this paper

Online since:

May 2022

Authors:

Andrey Soukhojak*, Tyler Stannard, Ian Manning, Charles Lee, Gil Chung, Matthew Gave, Edward Sanchez

Keywords:

4H, Bulk Crystal Growth, Defects, Image Analysis, Non-Destructive Dislocation Density Measurement, Physical Vapor Transport, PVT, X-Ray Topography, XRT

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Creative Commons CC BY 4.0

* - Corresponding Author

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