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HomeNano Hybrids and CompositesNano Hybrids and Composites Vol. 372D Strain Mapping in Sub-10nm SiGe Layer with...

2D Strain Mapping in Sub-10nm SiGe Layer with High-Resolution Transmission Electron Microscopy and Geometric Phase Analysis

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Abstract:

In this study, strain measurement can be analyzed in sub-10nm SiGe layer (~7 nm) grown on [100] Si substrate by chemical vapor deposition at the nanoscale level. The measurement technique is based on transmission electron microscopy (TEM), in which high-resolution transmission electron microscopy (HRTEM) image is combined with the image processing of geometric phase analysis (GPA) software. In this case, GPA analyzes the HRTEM images formed at the [011] zone axis to obtain information about strain maps along the [100] growth direction of the nanoscale SiGe region. The strain analyzed in the SiGe layer is within 1.6-2.9% with high precision and high spatial resolution.

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Nano Hybrids and Composites Vol. 37

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Periodical:

Nano Hybrids and Composites (Volume 37)

Pages:

41-47

DOI:

https://doi.org/10.4028/p-0xgppz

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Online since:

August 2022

Authors:

Van Vuong Hoang, Van Trung Trinh*

Keywords:

Geometric Phase Analysis, High-Resolution Transmission Microscopy, SiGe, Strain

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* - Corresponding Author

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