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Electrical properties of thin films deposited with MnO- and MnO2-modified BiFeO3 oxide targets

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Abstract

Mn-modified Bi1.05FeO3 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method with BFO oxide targets modified with MnO or MnO2, and the effects of the Mn were investigated. The 3% MnO-modified BFO thin film capacitor exhibited a large remnant polarization (2P r = 179 µC/cm2) and low leakage currents over a wide electric-field range. However, different leakage current behaviors were observed in the 10% MnO-modified and 10% MnO2-modified BFO thin films. The leakage current mechanism of the 10% MnO-modified BFO thin film was Ohmic conduction while that of the 10% MnO2-modified BFO thin film was related to the oxygen vacancy-associated electrical conductivity.

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Authors and Affiliations

  1. School of Nano & Advanced Materials Engineering, Changwon National University, Changwon, 641-773, Korea

    M. H. Lee, J. S. Park, D. J. Kim, D. Do, M. -H. Kim & T. K. Song

  2. Department of Physics, Changwon National University, Changwon, 641-773, Korea

    S. W. Kim, H. I. Choi, W. J. Kim & S. S. Kim

  3. Department of Physics and Research Center for Organic Display, Konkuk University, Seoul, 143-701, Korea

    I. R. Hwang & B. H. Park

Authors
  1. M. H. Lee
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  2. J. S. Park
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  3. D. J. Kim
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  4. D. Do
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  5. M. -H. Kim
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  6. T. K. Song
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  7. S. W. Kim
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  8. H. I. Choi
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  9. W. J. Kim
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  10. S. S. Kim
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  11. I. R. Hwang
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  12. B. H. Park
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Corresponding author

Correspondence to T. K. Song.

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Lee, M.H., Park, J.S., Kim, D.J. et al. Electrical properties of thin films deposited with MnO- and MnO2-modified BiFeO3 oxide targets. Journal of the Korean Physical Society 61, 1070–1074 (2012). https://doi.org/10.3938/jkps.61.1070

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  • DOI: https://doi.org/10.3938/jkps.61.1070

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