日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
巨大磁気抵抗効果・トンネル磁気抵抗効果(GMR・TMR)
非弾性電子トンネル分光法 (IETS)を用いた強磁性体/絶縁体界面の解析
村井 純一郎安藤 康夫手束 展規宮崎 照宣
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ジャーナル オープンアクセス

1998 年 22 巻 4_2 号 p. 573-576

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Inelastic electron-tunneling spectroscopy (IETS) has been used to investigate the vibrational spectrum in Al/Al2O3/CO/AI tunneling junctions with various Co thicknesses (d Co). A zero-bias anomaly was observed in the conductance curve of the junction with dCo of 2Å, and decreased with increasing dCo. The IET spectra of these junctions showed strong negative peaks at 4 mV, corresponding to the zero-bias anomaly, while phonon spectra were observed for the junction with dCo ≥ 10Å. The peak position was different from that of Al/Al2O3/Al. After annealing of the junction with dCo of 2Å at 250°C for one hour, the zero-bias anomaly decreased and the phonon spectrum appeared.

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© 1998 (社)日本応用磁気学会
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