A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure

This paper continues the analysis of the results of experimental studies of resistive switching in a structure based on a bismuth selenide microcrystal (flake). It was demonstrated earlier by simulations that both the presence of several highly resistive states in the examined structure and the peculiarities of transitions to these states can be explained by the specific behavior of numerous conducting channels permeating the surface high-resistance (defective) layer. The sources of the nucleation of these channels are believed to be nanoprotrusions on the clamping control silver electrode embedded in the surface layer. In this study it is shown that volumetric inhomogeneities of the surface layer, i.e., nanoinclusions with higher conductivity, can serve as additional sources of the channels. The simulation confirms that the behavior of the channels forming near such inhomogeneities is similar to that of the channels growing from the metallic nanoprotrusions.