Optimization of the random number generator based on InGaAs pi-n photodiode in a homodyne scheme using discrete wavelet analysis

M. E. Sibgatullin; Сибгатуллин М. Э.; L. R. Gilyazov; Гилязов Л. Р.; D. A. Mavkov; Мавков Д. А.; N. M. Arslanov; Арсланов Н. М.

doi:10.31857/S036767652370309X

Optimization of the random number generator based on InGaAs pi-n photodiode in a homodyne scheme using discrete wavelet analysis

Authors: Sibgatullin M.E.¹^,2^,3, Gilyazov L.R.¹, Mavkov D.A.¹, Arslanov N.M.¹
Affiliations:
1. Kazan National Research Technical University
2. Academy of Sciences of the Republic of Tatarstan
3. Kazan (Volga Region) Federal University
Issue: Vol 87, No 12 (2023)
Pages: 1796-1801
Section: Articles
URL: https://journals.rcsi.science/0367-6765/article/view/232553
DOI: https://doi.org/10.31857/S036767652370309X
EDN: https://elibrary.ru/QJPWDP
ID: 232553

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Abstract
About the authors
References
Supplementary files
Statistics

Abstract

An approach is proposed to optimize the operation of a random number generator based on discrete wavelet analysis. It is shown that controlling the contribution of the scale components of the wavelet transform to the signal can increase the degree of randomness of the generated series of numbers.

Keywords

random number generator, discrete wavelet analysis, Hurst exponent, entropy

About the authors

M. E. Sibgatullin

Kazan National Research Technical University; Academy of Sciences of the Republic of Tatarstan; Kazan (Volga Region) Federal University

Author for correspondence.
Email: sibmans@mail.ru
Russia, 420111, Kazan; Russia, 420111, Kazan; Russia, 420008, Kazan

L. R. Gilyazov

Kazan National Research Technical University

Email: sibmans@mail.ru
Russia, 420111, Kazan

D. A. Mavkov

Kazan National Research Technical University

Email: sibmans@mail.ru
Russia, 420111, Kazan

N. M. Arslanov

Kazan National Research Technical University

Email: sibmans@mail.ru
Russia, 420111, Kazan

References

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