This paper deals with an evaporation synthesis of zirconium nitride thin films which are used as electrical resistors. First, the thickness distributions of films produced by multiple sources have been computed. The incidence distribution of gas molecules on a substrate also has been calculated in a system with four gas inlet nozzles. The continuous evaporation apparatus for industrial use having a three-gun system for evaporation of zirconium was developed. The power of each electron gun is capable to be controlled individually by evaporation rate monitors in order to keep the evaporation rate constant. The uniformity in thickness of the deposited films has been compared with the theoretically calculated values. The specific resistivity of films and the temperature coefficient of film resistivity have been checked in relation to the synthesis condition of zirconium nitride thin films.