Research Article
Year 2022,
Volume: 6 Issue: 4, 331 - 339, 31.12.2022
Abstract
Supporting Institution
Yozgat Bozok Üniversitesi
Project Number
6602c-MUH/19-288.
References
- Zhang D, Wei Z, Yu K, Zhuo F, Liu Y, Li H: A method proposed for calculating the switching loss of SiC MOSFET in half bridge circuit. 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia). 2020:3460-3464 doi: 10.1109/IPEMC-ECCEAsia48364.2020.9367671.
- Zhang, W, Zhang L, Mao P and Chan X: Analysis of SiC MOSFET Switching Performance and Driving Circuit. 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC). 2018:1-4, doi: 10.1109/PEAC.2018.8590379.
- Sabri S, et al.: New generation 6.5 kV SiC power MOSFET. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2017:246-250 doi: 10.1109/WiPDA.2017.8170555.
- Kobayashi Y, et al.: High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2019:31-34 doi: 10.1109/ISPSD.2019.8757609.
- Liu Y, et al.: SiC MOSFET Threshold-Voltage Instability Under High Temperature Aging. 2018 19th International Conference on Electronic Packaging Technology (ICEPT). 2018:347-350, doi: 10.1109/ICEPT.2018.8480781.
- Gu C, Dong K, Liu B, Liu Y, Diao L and Meng D: Switching Ringing Suppression of SiC MOSFET in a Phase-Leg Configuration. 2019 IEEE 2nd International Conference on Power and Energy Applications (ICPEA). 2019:47-50 doi: 10.1109/ICPEA.2019.8818551.
- Cao L, Guo Q and Sheng K: Comparative Evaluation of the Short circuit Capability of SiC Planar and Trench Power MOSFET. 2018 IEEE 2nd International Electrical and Energy Conference (CIEEC). 2018:653-656, doi: 10.1109/CIEEC.2018.8745774.
- Mudholkar M, Saadeh M and Mantooth H.A: A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs. Proceedings of the 2011 14th European Conference on Power Electronics and Applications. 2011:1-10.
- Sayed H, Zurfi A and Zhang J: Design and experiments of a SiC power MOSFET bidirectional switching power pole. 2016 IEEE 25th International Symposium on Industrial Electronics (ISIE). 2016:460-464 doi: 10.1109/ISIE.2016.7744933.
- Fursin L, Li X, Li Z, O'Grady M, Simon W and Bhalla A: Reliability aspects of 1200V and 3300V silicon carbide MOSFETs. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2017: 373-377 doi: 10.1109/WiPDA.2017.8170575.
- Chou W, Kempitiya A and Vodyakho O: Reduction of Power Losses of SiC MOSFET Based Power Modules in Automotive Traction Inverter Applications. 2018 IEEE Transportation Electrification Conference and Expo (ITEC). 2018:1035-1038 doi: 10.1109/ITEC.2018.8450130.
- Hu H, Li W, Long Z and Chen X: Design of Levitation Chopper for Maglev Train based on SiC MOSFET. 2020 Chinese Automation Congress (CAC). 2020:4343-4347 doi: 10.1109/CAC51589.2020.9327800.
- Karki U, and Peng F. Z: Precursors of Gate-Oxide Degradation in Silicon Carbide MOSFETs. 2018 IEEE Energy Conversion Congress and Exposition (ECCE). 2018:857-861 doi: 10.1109/ECCE.2018.8557354.
- Yalcin S, Göksu T, Kesler S ve Bingöl O: Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers. 2020;8(4):241-244 doi:10.18100/ijamec.801730.
- Qi J, et al.: Dynamic performance of 4H-SiC power MOSFETs and Si IGBTs over wide temperature range. 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). 2018:2712-2716 doi: 10.1109/APEC.2018.8341400.
- Pengfei L, Xibin G, Haiping Z, Qing Z and Longfei J: A Drive Circuit Design Based on SIC MOSFET and Analysis of Problems. 2019 22nd International Conference on Electrical Machines and Systems (ICEMS). 2019:1-5, doi: 10.1109/ICEMS.2019.8921930.
- Acquaviva A and Thiringer T: Energy efficiency of a SiC MOSFET propulsion inverter accounting for the MOSFET's reverse conduction and the blanking time. 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). 2017:1-9.
- Li X, Li W. –ji., Liang B, Zhu G –r. , Xie M and Li X –s.: Research on Performance Comparisons of SiC MOSFET, CoolMOS, and Si MOSFET Based on H-Bridge Double-Sided LCC Resonant Network. 2015 International Conference on Industrial Informatics - Computing Technology. Intelligent Technology, Industrial Information Integration. 2015:276-279 doi: 10.1109/ICIICII.2015.150.
- Çetin E: Elektrikli Araç İnverterleri için SiC MOSFET Yapıları Hakkında Kapsamlı Bir İnceleme. International Symposium of Scientific Research and Innovative Studies. February 2021
The Performance Comparison of the SiC and Si Mosfets Used in the 3-Phase Brushless DC Motor Drives for Electric Vehicles
Abstract
This study was carried out to compare the Si and SiC MOSFETs in the market used on motor driver circuits. A motor driver circuit is designed to run the brushless DC motors. Thanks to the semiconductors used in the driver circuit, the motor receives current as desired. While performing this task, the MOSFETs get hot and lose power. This situation changes according to the material structure used inside the MOSFETs. Hence, it is planned to compare Si MOSFETs that have been in the market for a long time and SiC MOSFETs that have been used recently under different loads and different temperatures circumstances. Si and SiC MOSFETs are placed in the motor driver circuit, which has the same structure in the simulation environment. The operation of the motor under no load and on different mechanical loads has been analysed. In these cases, the response of the MOSFETs to temperature changes was also analysed by changing the cooling temperature. As a result of the study, SiC MOSFETs were less heated and less power loss was observed than Si MOSFETs. It has been observed that when the mechanical load is high, the switching speed of Si MOSFETs decreases despite the speed of SiC MOSFETs is not affected. As a result of this study, it has been observed that SiC MOSFETs used in the motor driver circuit work more efficiently than Si MOSFETs for electric vehicles.
Project Number
6602c-MUH/19-288.
References
- Zhang D, Wei Z, Yu K, Zhuo F, Liu Y, Li H: A method proposed for calculating the switching loss of SiC MOSFET in half bridge circuit. 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia). 2020:3460-3464 doi: 10.1109/IPEMC-ECCEAsia48364.2020.9367671.
- Zhang, W, Zhang L, Mao P and Chan X: Analysis of SiC MOSFET Switching Performance and Driving Circuit. 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC). 2018:1-4, doi: 10.1109/PEAC.2018.8590379.
- Sabri S, et al.: New generation 6.5 kV SiC power MOSFET. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2017:246-250 doi: 10.1109/WiPDA.2017.8170555.
- Kobayashi Y, et al.: High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2019:31-34 doi: 10.1109/ISPSD.2019.8757609.
- Liu Y, et al.: SiC MOSFET Threshold-Voltage Instability Under High Temperature Aging. 2018 19th International Conference on Electronic Packaging Technology (ICEPT). 2018:347-350, doi: 10.1109/ICEPT.2018.8480781.
- Gu C, Dong K, Liu B, Liu Y, Diao L and Meng D: Switching Ringing Suppression of SiC MOSFET in a Phase-Leg Configuration. 2019 IEEE 2nd International Conference on Power and Energy Applications (ICPEA). 2019:47-50 doi: 10.1109/ICPEA.2019.8818551.
- Cao L, Guo Q and Sheng K: Comparative Evaluation of the Short circuit Capability of SiC Planar and Trench Power MOSFET. 2018 IEEE 2nd International Electrical and Energy Conference (CIEEC). 2018:653-656, doi: 10.1109/CIEEC.2018.8745774.
- Mudholkar M, Saadeh M and Mantooth H.A: A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs. Proceedings of the 2011 14th European Conference on Power Electronics and Applications. 2011:1-10.
- Sayed H, Zurfi A and Zhang J: Design and experiments of a SiC power MOSFET bidirectional switching power pole. 2016 IEEE 25th International Symposium on Industrial Electronics (ISIE). 2016:460-464 doi: 10.1109/ISIE.2016.7744933.
- Fursin L, Li X, Li Z, O'Grady M, Simon W and Bhalla A: Reliability aspects of 1200V and 3300V silicon carbide MOSFETs. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). 2017: 373-377 doi: 10.1109/WiPDA.2017.8170575.
- Chou W, Kempitiya A and Vodyakho O: Reduction of Power Losses of SiC MOSFET Based Power Modules in Automotive Traction Inverter Applications. 2018 IEEE Transportation Electrification Conference and Expo (ITEC). 2018:1035-1038 doi: 10.1109/ITEC.2018.8450130.
- Hu H, Li W, Long Z and Chen X: Design of Levitation Chopper for Maglev Train based on SiC MOSFET. 2020 Chinese Automation Congress (CAC). 2020:4343-4347 doi: 10.1109/CAC51589.2020.9327800.
- Karki U, and Peng F. Z: Precursors of Gate-Oxide Degradation in Silicon Carbide MOSFETs. 2018 IEEE Energy Conversion Congress and Exposition (ECCE). 2018:857-861 doi: 10.1109/ECCE.2018.8557354.
- Yalcin S, Göksu T, Kesler S ve Bingöl O: Determination of Conducted EMI in SiC Based Dual Active Bridge Converter. International Journal of Applied Mathematics Electronics and Computers. 2020;8(4):241-244 doi:10.18100/ijamec.801730.
- Qi J, et al.: Dynamic performance of 4H-SiC power MOSFETs and Si IGBTs over wide temperature range. 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). 2018:2712-2716 doi: 10.1109/APEC.2018.8341400.
- Pengfei L, Xibin G, Haiping Z, Qing Z and Longfei J: A Drive Circuit Design Based on SIC MOSFET and Analysis of Problems. 2019 22nd International Conference on Electrical Machines and Systems (ICEMS). 2019:1-5, doi: 10.1109/ICEMS.2019.8921930.
- Acquaviva A and Thiringer T: Energy efficiency of a SiC MOSFET propulsion inverter accounting for the MOSFET's reverse conduction and the blanking time. 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). 2017:1-9.
- Li X, Li W. –ji., Liang B, Zhu G –r. , Xie M and Li X –s.: Research on Performance Comparisons of SiC MOSFET, CoolMOS, and Si MOSFET Based on H-Bridge Double-Sided LCC Resonant Network. 2015 International Conference on Industrial Informatics - Computing Technology. Intelligent Technology, Industrial Information Integration. 2015:276-279 doi: 10.1109/ICIICII.2015.150.
- Çetin E: Elektrikli Araç İnverterleri için SiC MOSFET Yapıları Hakkında Kapsamlı Bir İnceleme. International Symposium of Scientific Research and Innovative Studies. February 2021
There are 19 citations in total.
Details
| Primary Language | English |
|---|---|
| Subjects | Electrical Engineering |
| Journal Section | Research Articles |
| Authors | |
| Project Number | 6602c-MUH/19-288. |
| Publication Date | December 31, 2022 |
| Submission Date | June 18, 2022 |
| Acceptance Date | October 19, 2022 |
| Published in Issue | Year 2022 Volume: 6 Issue: 4 |
Cite
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