Author
Abstract
In this paper, a porous silicon (PS) layer is investigated as a sensing material
to detect the organic vapors with low concentration. The structure of the
prepared sensor consists of thin Au /PS/n-Si/Au thick where the PS is etched
photo -chemically. The current response of the sensor is governed by the
partial depletion of silicon located between two adjacent (porous
regions).This depletion is due to the charges trapped on dangling bonds
associated with the silicon – porous silicon interface .
Keywords
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