Author
Abstract
In this work, profiles of laser-induced diffusion of arsenic in silicon are
presented. These profiles are considered to attempt increasing of the current
gain of silicon transistors. The current gain is well enhanced. This
enhancement is attributed to the increase achieved in the diffusion length
within a certain layer of emitter region. Laser-induced diffusion is a perfect
technique for improving the characteristics of electronic devices since it is
flexible, contactless, clean and well controlled.
Keywords
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