Authors
Abstract
In this work, normalized characteristics of laser-induced diffusion of
arsenic in silicon are presented. These characteristics are considered as are
enhancing the As-doped silicon-based devices. This enhancement is attributed
to the increasing in the diffusion length within a certain layer of the active
region in the device. Laser-induced diffusion is a perfect technique for
improving the characteristics of electronic devices because it is flexible,
contactless, clean and well controlled.
Keywords
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