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Construction of a silicon-based solid state quantum computer (pp82-95)
Andrew S. Dzurak, M.Y. Simmons, A.R. Hamilton, Robert G. Clark, Rolf
Brenner, T.M. Buehler, N.J. Curson, E. Gauja, R.P. McKinnon, L.D. Macks,
M. Mitic, Jeremy L. O'brien, L. Oberbeck, D.J. Reilly, S.R. Schofield,
and F.E. Stanley
doi:
https://doi.org/10.26421/QIC1.s-8
Abstracts:
We discuss progress towards the fabrication and
demonstration of a prototype silicon-based quantum computer. The devices
are based on a precise array of 31P
dopants embedded in 28Si.
Fabrication is being pursued via two complementary pathways – a
‘top-down’ approach for near-term production of few-qubit demonstration
devices and a ‘bottom-up’ approach for large-scale qubit arrays. The
‘top-down’ approach employs ion implantation through a multi-layer
resist structure which serves to accurately register the donors to metal
control gates and single-electron transistor (SET) read-out devices. In
contrast the ‘bottom-up’ approach uses STM lithography and epitaxial
silicon overgrowth to construct devices at an atomic scale. Techniques
for qubit read-out, which utilise coincidence measurements on novel
twin-SET devices, are also presented.
Key words: solid state
quantum computer |
