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Quantum
Information and Computation
ISSN: 1533-7146
published since 2001
|
Vol.1 Special, December 2001 |
Fabricating an all-epitaxial silicon quantum computer
(pp129-133)
J.R. Tucker and T.-C. Shen
doi:
https://doi.org/10.26421/QIC1.s-14
Abstracts:
Scalable silicon quantum computers will require a
material perfection that has never been attempted.
Ground state wavefunctions for conduction electrons orbiting individual
phosphorous donors must be polarized electronically and coupled to
nearest neighbors with great precision. Elimination of all randomizing
influences can be achieved only with a fully epitaxial structure; and we
believe that output circuitry must also be integrated into the qubit
arrays in order to achieve the uniformity needed for large-scale
integration. A process that could potentially accomplish this will be
outlined, based on scanning tunneling microscope (STM) removal of
individual hydrogen atoms from the H-terminated silicon surface followed
by phosphine dosing and ultra-low-temperature overgrowth. Self-ordering
of PH3 molecules onto extended areas of bare silicon should
permit patterning of planar single-electron transistors along with
P-donor qubits in the same lithographic step. Initial plans for an
experiment to characterize exchange coupling under gate control will be
described.
Key words: all-epitaxial
silicon quantum computer, fabrication |
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