TiO₂ thin films were prepared on glass substrates by reactive ion beam sputtering method. A metalic Ti target was sputtered by Ar ion beam, and O₂ gas was introduced as reactive gas.
Deposition rate of films increased as ion beam energy became higher. When oxygen partial pressure was 5×10_-5Torr or above it, Ti atoms reacted with oxygen, and transparent TiO₂ films were obtained. Films deposited on glass substrates at 200°C or above it had crystal structure of the rutile which is the high-temperature stable phase of TiO₂. These results suggest the contribution of energy of sputtered particles to decrease of crystallization temperature.