Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Design and Development of ArF Photoresist for XTC Lithography Process
Jen-Chieh ShihJia-hom ChuChing-Yu Chung
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2006 Volume 19 Issue 3 Pages 319-322

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Abstract

Focus-latitude enhancement exposure (FLEX) is an approach to enhance the effective depth of focus (DOF) in optical projection printing. However, throughput is reduced with multiple exposures. Besides, the contrast of aerial images and exposure latitude (EL) are decreased by FLEX. X-tilted correction (XTC) provides a solution to improve throughput and preserve the imaging performance of FLEX. In this paper, lithographic performance of XTC exposure was studied using polymers with different loading of photo acid generators (PAG) and quenchers. Experiment results showed that polymer with middle active energy of acid-label group performed better. MEF and DOF of XTC were not sensitive to PAG loading but the diffusion length and acidity of PAG impacted MEF and DOF. Furthermore, some quenchers were added to the photoresist to control the acid diffusion rate for XTC. We can conclude that polymer in combination with proper PAG loading and quencher must be specially designed for XTC lithography process.

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© 2006 The Society of Photopolymer Science and Technology (SPST)
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