1989 年 53 巻 11 号 p. 1079-1084
The effect of etching temperature on the dissolution rates at edge dislocation sites and dislocation-free sites of the (111) surface of copper single crystals was studied. The etching was carried out at temperatures 270 to 285 K for 5 to 25 s with Young’s etchant containing (NH4)2S2O8 1 kmol·m−3, NH4OH 6 kmol·m−3 and NH4Br 0.3 kmol·m−3. From the measured data on the width and depth of dislocation etch pits and the dissolved thickness of the (111) matrix surface as a function of etching time, the linear dissolution rates parallel and normal to the surface at dislocation sites, vh and vd, and the dissolution rate normal to the surface at dislocation-free sites, vs, were calculated. As a result, it was found that the dissolution rates were in the order of vh>vd>vs at any temperature and that they increased as the etching temperature increased. These results were qualitatively discussed by the kinetic theory of two-dimensional nucleation and step motion for crystal dissolution and some kinetic quantities relating to the formation of two-dimensional nucleus and the step motion were evaluated.