Serbian Journal of Electrical Engineering 2014 Volume 11, Issue 1, Pages: 35-46
https://doi.org/10.2298/SJEE131129004M
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Microstructural and dielectrical characterization of Ho doped BaTiO3 ceramics
Marjanović Miloš (Faculty of Electronic Engineering, Niš)
Dimitrijević Dragana (Faculty of Electronic Engineering, Niš)
Paunović Vesna (Faculty of Electronic Engineering, Niš)
Prijić Zoran (Faculty of Electronic Engineering, Niš)
The Ho doped BaTiO3 ceramics, with different Ho2O3 content, ranging from 0.01
to 1.0 wt % Ho, were investigated regarding their microstructural and
dielectric characteristics. Doped BaTiO3 were prepared using conventional
solid state reaction and sintered at 1380°C for four hours. SEM analysis of
Ho/BaTiO3 doped ceramics showed that the low doped samples exhibit mainly
fairly uniform and homogeneous microstructure with the grain size ranged from
20-40 μm. In the samples with the higher dopant concentration the abnormal
grain growth is inhibited and the grain size ranged between 2-10 μm.
Measurements of dielectric properties were carried out as a function of
temperature up to 180 °C at different frequencies. The samples doped with
0.01wt % of Ho, exhibit the high value of dielectric permittivity (εr = 2160)
at room temperature. A nearly flat permittivity-response was obtained in
specimens with higher additive content. Using a Curie-Weiss law and modified
Curie-Weiss law the Curie constant (C), Curie temperature (Tc) and a critical
exponent of nonlinearity (g) were calculated. The Curie temperature of doped
samples were ranged from 128 to 130°C. The Curie constant for all series of
samples decrease with increase of dopant concentration and the lowest values
were observed on samples doped with 0.01 wt % of holmium.
Keywords: BaTiO3, microstructures, sintering, additive, dielectric properties
Projekat
Ministarstva nauke Republike Srbije, br. OI 172057: Directed synthesis,
structure and properties of multifunctional materials i br. TR 32026