doiSerbia

The growth of sapphire single crystals

Golubović Aleksandar (Institute of Physics, Belgrade)
Nikolić Slobodanka (Institute of Physics, Belgrade)
Đurić Stevan (Faculty of Mining and Geology, Belgrade)
Valčić Andreja (Faculty of Technology and Metallurgy, Belgrade)

Sapphire (Al2O3) single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grash of numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation c = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523Kwas found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

Keywords: Czochralski technique, sapphire, growth, single crystal, etching