Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project
We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-07CH11359
- OSTI ID:
- 975162
- Report Number(s):
- FERMILAB-TM-2455-E; TRN: US1002819
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation damage studies for the D0 silicon detector
Thermal properties of D0 Run IIb silicon detector staves
Thermal properties of D0 Run IIb silicon detector staves
Conference
·
Thu Jan 01 00:00:00 EST 2004
· Nucl.Instrum.Meth.A530:105-109,2004
·
OSTI ID:975162
Thermal properties of D0 Run IIb silicon detector staves
Technical Report
·
Fri Jun 01 00:00:00 EDT 2001
·
OSTI ID:975162
Thermal properties of D0 Run IIb silicon detector staves
Technical Report
·
Fri Jun 01 00:00:00 EDT 2001
·
OSTI ID:975162