2003 年 111 巻 1290 号 p. 133-136
Amorphous carbon thin films containing sulfur were synthesized from thiophene (C4H4S) by the r.f. (13.56 MHz) plasma CVD. The r.f. power was applied intermittently to control the deposition temperature (Td). While maintaining a constant r.f. power (200 W) and reactive pressure (13.3 Pa), we investigated the effect of Td on the film chemical structures and properties: specifically microroughness, density, microhardness and internal stress. The deposition rate and microroughness of the films decreased with increasing Td, while the film density, microhardness and internal stress increased with increasing Td. X-ray photoelectron spectroscopic (XPS) analysis indicated that S/C ratio of the films remained constant and has no connection with Td. XPS and Raman spectroscopic analyses showed that the films were composed of two kinds of microdomains with sp3 and sp2 bonds similar to the diamond-like carbon (DLC) film. Sulfur incorporation into the film significantly reduced the internal stress.