Copper metallization of AlN substrate and Molybdenum metallization of Si₃N₄, SiC and Al₂O₃ substrates were performed using an ion beam dynamic mixing method. In this method, a high energy ion beam of 50keV (Ti⁺, Ar⁺ or N⁺) and a co-evaporated metal vapor (Cu or Mo) were irradiated onto a ceramic substrate to deposit the metal film. This method, especially with Ti⁺ ion beam, was found to be quite useful to obtain adhesive metal films. A Cu film coated on an AlN substrate showed an adhesion strength of>70MPa, and a high soldering strength of>40MPa for a soft solder. The adhesion strength of a Mo film coated on a ceramic substrate did not decrease when heated up to 973K: a Mo-coated ceramic was bonded to a Cu rod using an amorphous brazing metal at 973K, resulting in a strong joint of >120MPa for each type of ceramics. The ceramics-metal interface region of the Mo-coated Si₃N₄ and SiC were observed by TEM and XPS, and an interface layer well-mixed by an energetic Ti⁺ ion beam was confirmed. Amorphous compounds and fine precipitated crystals such as TiN, composed of the implanted Ti, the evaporated Mo and some constituent elements of the ceramics, were identified in the interface layers.