Young Researcher Paper Award 2023
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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 34, Number 3(4) (2022)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1255-1264
S&M2888 Research Paper of Special Issue https://doi.org/10.18494/SAM3757 Published: March 24, 2022 Failure Mechanism and Reinforcement Technology of 55 nm CMOS Inverter Induced by High-power Microwave [PDF] Jinbin Pan, Yanning Chen, Yang Zhao, Shulong Wang, Dongyan Zhao, Yubo Wang, Zhen Fu, Peng Zhang, Ruiqi Cheng, Jiewei Li, Dong Zhang, Xiao Zhang, and Shushan Shan (Received November 29, 2021; Accepted February 14, 2022) Keywords: complementary metal oxide semiconductor, high-power microwave, latch-up, reinforced structure
High-power electromagnetic pulses can transmit a large induced electromotive force or energy through metal interconnection lines, causing interference or damage to integrated circuits. CMOS circuits are the basic components of sensors, so sensors that work in an electromagnetic environment may malfunction. It is of great importance to study the anti-electromagnetic damage technology of CMOS inverters. On the basis of the simulation using Sentaurus, an electrothermal coupling model of a 55 nm CMOS inverter is established. The simulation results show that the latch-up effect is the main mechanism of CMOS failure. In view of the failure process under different high-power microwave (HPM) pulse parameters, we propose a CMOS inverter reinforcement technology. Research shows that the source injection current of the reinforced structure is more than ten times less than that of the traditional structure under electromagnetic interference, which effectively suppresses the occurrence of latch-up.
Corresponding author: Shulong Wang  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Jinbin Pan, Yanning Chen, Yang Zhao, Shulong Wang, Dongyan Zhao, Yubo Wang, Zhen Fu, Peng Zhang, Ruiqi Cheng, Jiewei Li, Dong Zhang, Xiao Zhang, and Shushan Shan, Failure Mechanism and Reinforcement Technology of 55 nm CMOS Inverter Induced by High-power Microwave, Sens. Mater., Vol. 34, No. 3, 2022, p. 1255-1264. |
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