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Cathodoluminescence Studies of InGaN Quantum Wells

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Abstract

Low temperature cathodoluminescence has been used to investigate the spatial characteristics of light emission in InxGa1−xN single quantum wells. High spatial resolution, narrow band pass imaging shows the luminescence to be strongly inhomogeneous in wavelength as well as in intensity on a sub-micron scale. Cathodoluminescence spectra correlate favorably with photoluminescence spectra. However, when spectra are recorded from different areas in spot mode, the quantum emission varies significantly in wavelength. The observed variations are consistent with composition inhomogeneities in the quantum well.

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Acknowledgments

This work was partially supported by Department of Commerce Advanced Technology Program (70NANB2H1241) and by ARPA (Agreement # MDA972-95-3-0008).

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Authors and Affiliations

  1. Xerox Palo Alto Research Center, Palo Alto, CA, 94304, USA

    F. A. Ponce

  2. Oxford Instruments, Tubney Woods, Abingdon, Oxon, 0X13 5QX, U.K.

    S. A. Galloway

  3. Optoelectronics Division, Hewlett-Packard Company, 370 W.Trimble Rd., San Jose, CA, 95131, USA

    W. Goetz & R. S. Kern

Authors
  1. F. A. Ponce
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  2. S. A. Galloway
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  3. W. Goetz
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  4. R. S. Kern
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Correspondence to F. A. Ponce.

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Ponce, F.A., Galloway, S.A., Goetz, W. et al. Cathodoluminescence Studies of InGaN Quantum Wells. MRS Online Proceedings Library 482, 660–665 (1997). https://doi.org/10.1557/PROC-482-625

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  • DOI: https://doi.org/10.1557/PROC-482-625

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