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Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes

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Abstract

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under CW operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2 × 1020/cm3, respectively. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 μm and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively.

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Authors and Affiliations

  1. Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima, 774, Japan

    Shuji Nakamura

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  1. Shuji Nakamura
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Correspondence to Shuji Nakamura.

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Nakamura, S. Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes. MRS Online Proceedings Library 449, 1135–1142 (1996). https://doi.org/10.1557/PROC-449-1135

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