電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<光・量子エレクトロニクス>
リッジ基板上の一回の選択MOCVDによるInGaAs/AlGaAs 量子細線DFBレーザー
高須賀 庸行米井 健治小倉 睦郎
著者情報
ジャーナル フリー

2007 年 127 巻 7 号 p. 985-989

詳細
抄録

A quasi-buried hetero-structure (BH) quantum wire (QWR) distributed feedback (DFB) laser was realized by one time selective metalorganic chemical vapor deposition (MOCVD) on a ridge substrate with a sub-micron grating. One time selective MOCVD growth forms ridge waveguide with BH structure and a QWR array for gain guided DFB LD without additional etching or re-growth process. The threshold current is 15mA, and the threshold current density is 850A/cm2. A stable single longitudinal mode was preserved until 3 Ith, after which another mode emerged at higher drive current at 813.6nm. This suggests a complex coupled DFB mode operation. Elimination of the re-growth step also enlarges the selection of material for extended wavelength and operational temperature.

著者関連情報
© 電気学会 2007
次の記事
feedback
Top