PACS: 72.20, 78.30.A, F, 81.05.C, D, E, G, H

Crystals Cd _1-x Zn_xTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties

L.V. Atroshchenko, S.N. Galkin, L.P. Gal'chinetskii, A.I. Lalayants, I.A. Rybalka, V.D. Ryzhikov, V.I. Silin, N.G. Starzhinskii

Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, №4.-P.81-85. - Engl. Il.: 4. Ref.: 5.

Abstract. Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd1-xZnxTe has been studied. The crystals were grown both from the raw material which had been pre-synthesized in quartz ampoules and from the raw material synthesized from the elements directly in the growth furnace. It is shown that the best values of electric resistivity r (up to 1011 OhmЧcm) and sensitivity to X-ray and gamma-radiation are obtained for crystals grown in crucibles of highly pure coal-graphite material from the pre-synthesized raw charge. Correlation has been established between values of r and crystal defectness: decrease of dislocation density by 104 times led to 107 times higher values of resistivity.
Concentration of dislocation etching pits regularly decreased with higher purity of the raw material and optimization of crystal preparation technology.

Keywords: preparation conditions, structure defectness, electric resistivity, dislocation density, semiconductor detectors.

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