Appearance potentials and ionization efficiency curves of negative ions formed in SiCl4, CH3SiCl3, (CH3)2SiCl2, (CH3)3) 3SiCl, C2H3SiCl3, and C6H5SiCl3 by electron impact have been measured by using a Fox ion source. Negative molecular ions were observed in SiCl4, C2H3SiCl3 and C6H5SiCl3 besides several fragment ions. The electron affinity of the SiCl3 radical was found to be about equal to the electron affinity of the chlorine atom. The electron affinity of SiCl2 is shown to be higher than 2.5 eV.
Dissociative electron capture processes from SF6– have been found in mixtures of SFe and silicon compounds (such as SF6–+SiCl4 ➝ Cl–+SiCl3+SF6). It is concluded that in these processes the electron in SF6– behaves like a free electron of zero kinetic energy. Various reactions of the O–-ion with the silicon compounds have also been observed.
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