ノート
シリコンと酸素の表面反応における運動エネルギーの影響
2000 年 21 巻 7 号 p. 444-447
詳細
2000 年 21 巻 7 号 p. 444-447
The influence of translational energy of incident O2 molecules on Si(001) active oxidation process was investigated by detection of scattered O2 and desorbed SiO molecules. The translational energy of O2 molecules was controlled up to 3 eV by a supersonic seed beam technique using a high temperature nozzle. The O2 reflectivity and the SiO desorption rate were abruptly changed at about 700oC with the translational energy larger than 2 eV. The phenomenon may be attributed to the direct oxidation of silicon dimers backbonds followed by SiO desorption.
