Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications
Fig 3
(a) Silicon nanowires produced by EBL and ICP-RIE, (b) size reduction by thermal oxidation, (c) BOE etching of the oxidized surface reduces the size of silicon nanowires, (d) silicon nanowires with the corresponding contact pads and (e) the sensor consisting of silicon nanowires integrated with the microfluidic channel.