The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
Fig 3
(a) The average electron density in the channel after considering the energy relaxation of the channel electrons as a function of the gate voltage and the channel electric field. (b) The relative increase in the average electron density in the channel considering the energy relaxation compared to those neglecting the energy relaxation.