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Reliability of strained-layer InGaAs quantum well heterostructure lasers

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Abstract

Future optical fiber communications systems are likely to include rare-earth-doped optical fiber amplifiers. Er-doped germanosilica fiber amplifier systems require efficient high-power fundamental-mode pump lasers emitting at a wavelength of either 1.48 or 0.98 μm. While 1.48-μm emission can be obtained from lattice-matched InGa-AsP-InP heterostructure lasers, similar to those used as source at 1.3 and 1.55 μm, emission wavelengths in the range of 0.9-1.1 μm are unobtainable from this system or from the well developed lattice-matched AlGaAs-GaAs heterostructure materials system. InGaAs-GaAs strained-layer quantum well heterostructure lasers, in which the large amount of strain associated with lattice mismatch is accommodated elastically provided the layers are sufficiently thin, provide for laser emission in the range of 0.9-1.1 μm. Consideration of highly strained laser structures operating at high output powers for a system application, however, raises the inherent question of the long term reliability of these structures.

© 1992 Optical Society of America

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