Abstract

Tamm plasmon polaritons (TPPs) have emerged as a promising platform for photodetector applications due to their strong light–matter interaction and potential for efficient light absorption. In this work, a design for a broadband photodetector (PD) based on the optical Tamm plasmon (OTS) state generated in a periodic metal–semiconductor–distributed Bragg reflector (DBR) geometry is proposed. The transfer matrix method (TMM) was used to study the propagation of electromagnetic waves through the proposed structure. By exciting the structure with incident light and analyzing the electric field profile within the multilayer structure at the resonant wavelength, we observe a distinctive electric field distribution that indicates the presence of Tamm plasmon modes. A comparative study was conducted to investigate the optical properties of a photodetector in the near-infrared (NIR) range by varying parameters such as thickness. By optimizing the thickness, we successfully achieved a broadband photoresponse in the photodetector, with a maximum responsivity of 21.8 mA/W at a wavelength of 1354 nm, which falls within the photonic bandgap region. FWHM was found to be 590 nm for the responsivity spectrum. The geometry also presents maximum absorption with FWHM calculated to be about 871.5 nm. The proposed geometry offers a broadband photoresponse, which is advantageous for the advancement of Tamm-based detector technologies. The ability to detect light over a wide operation range makes this mechanism highly beneficial for various applications.

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