年次大会講演論文集
Online ISSN : 2433-1325
セッションID: 938
会議情報
分子動力学法によるシリコンカーバイドの押し込みシミュレーション : 変形機構に及ぼす圧子半径の寸法効果(S09-1 計算ナノ・マイクロテクノロジーの新展開(1),S09 計算ナノ・マクロテクノロジーの新展開)
中野 賢一田中 宏明島田 尚一
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会議録・要旨集 認証あり

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In-depth investigations into nano-indentation play an important role in the full understanding of the deformation mechanisms of materials subjected to ultra-precision machining on the nanometer scale. This paper developed a reliable molecular dynamics model for simulating the nano-indentation of monocrystalline silicon carbide by some diamond hemispherical indenters that have different radii sizes. The research shows the size effect of indenter radius for deformation mechanisms. A phase transformation from its crystal structure to amorphous and a crack generation and propagation are observed with the smaller indenter radius, while a phase transformation to amorphous on a thin plane, stacking faults and crack generation and propagation are observed with the larger indenter radius.

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© 2004 一般社団法人日本機械学会
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