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Exploring the Electro-Thermal Properties of Chromium Silicon Monoxide Films and Its Possible Storage Applications

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Chromium silicon monoxide has received considerable interest due to its applications as resistor. To deeply explore the key factors that determine the electro-thermal properties of chromium silicon monoxide films, a variety of chromium silicon monoxide films were prepared on glass and silicon substrates for different deposition conditions. The electrical resistivities of the chromium silicon monoxide films were found to strongly depend on the film thickness, atomic proportion of silicon oxide, and annealing temperature, and reducing the atomic proportion of silicon oxide can effectively suppress its resistivity variation for different temperature. In this case, choosing smaller atomic proportion of silicon oxide can greatly enhance the life stability of the chromium silicon oxide films. Based on the measured data, a chromium silicon monoxide film with the optimized thickness, electrical resistivity, and thermal conductivity, are fabricated, and its influence on the physical performances of the electrical memory is also assessed.

Keywords: Capping; Chromium Silicon Monoxide; Electrical Conductivity; Thermal Conductivity

Document Type: Research Article

Affiliations: 1: Jiangxi Hongdu Aviation Group Co., Ltd., Nanchang, 330001, P. R. China 2: Key Laboratory of Millimeter Wave Romote Sensing Technology, Shanghai Academy of Spaceflight Technology, Shanghai, 201109, P. R. China

Publication date: 01 March 2022

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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