Effect of Oxygen Annealing on the Characteristics of Isotype Ga2O3/4H-SiC Heterojunction Diodes
Ga2O3/n-type 4H-SiC heterojunction diodes were fabricated by depositing Ga2O3 thin films on off-axis cut n type 4H-SiC substrates by RF magnetron sputtering. The influence of oxygen atmosphere annealing on the film quality and
optical properties of Ga2O3 layers is investigated. The I–V characteristics of the diodes are acquired in the range from 25 to 175 °C with temperature step of 50 °C. The annealed diodes exhibit improved rectifying ratio (∼1 × 108
for ±2V) and an improved ideality factor (1.83) at 25 °C. Additionally, the photodiode that was annealed in the presence of an oxygen atmosphere shows an increased photocurrent, higher responsivity and an improved time dependent photo-response than as-grown devices.
Keywords: DEEP-UV; GALLIUM OXIDE; HETEROJUNCTION; PHOTO DETECT; SILICON CARBIDE
Document Type: Research Article
Publication date: 01 May 2020
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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