Structural, Optical, and Electrical Properties of Thin Films of Bismuth Tri-Iodide

Bismuth Iodide is a potentially active semiconductor material for room temperature radiation detector. Thus films of Bismuth tri-iodide are grown on both glass and platinised silicon substrate at room temperature by thermal evaporation technique to study its structural, optical, and electrical properties. Films are characterized by XRD and SEM to ascertain its quality. The optical transmission spectra shows high absorption in the visible region and optical band gap shows thickness dependence. Electrical properties were measured in MIM configuration and films show high resistivity, a prerequisite parameter for film to act as radiation detector.