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Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy

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Abstract

An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at ~125 and ≤250°C) are observed. At the temperature T > 250°C, elemental tellurium is desorbed, and a Te-stabilized (1 × 1) CdTe(013) structure is formed.

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ACKNOWLEDGMENTS

The AFM measurements were performed using equipment of the Multiple-access center “Nanostructures”.

We thank V.G. Remesnik and V.S. Varavin for carrying out measurements to determine the composition and electrical parameters of CdHgTe HESs.

Funding

The part of the study concerned with the MBE growth of CdHgTe HESs and the ellipsometry measurements was supported by the Russian Foundation for Basic Research, project no. 18-29-20053. The part of the study concerned with the growth of PbSnTe films was supported by the Russian Foundation for Basic Research, project no. 20-32-90154. The part of the study concerned with the XPS measurements was supported by the Russian Foundation for Basic Research and Novosibirsk region, project no. 20-42-543015. The part of the study concerned with the AFM measurements was supported by the Russian Science Foundation, project no. 18-72-10063.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. S. Tarasov, N. N. Mikhailov, S. A. Dvoretsky, R. V. Menshchikov, I. N. Uzhakov, A. S. Kozhukhov, E. V. Fedosenko & O. E. Tereshchenko

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    N. N. Mikhailov & O. E. Tereshchenko

  3. Tomsk State University, 634050, Tomsk, Russia

    S. A. Dvoretsky

Authors
  1. A. S. Tarasov
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  2. N. N. Mikhailov
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  3. S. A. Dvoretsky
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  4. R. V. Menshchikov
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  5. I. N. Uzhakov
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  6. A. S. Kozhukhov
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  7. E. V. Fedosenko
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  8. O. E. Tereshchenko
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Correspondence to A. S. Tarasov.

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Translated by E. Smorgonskaya

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Tarasov, A.S., Mikhailov, N.N., Dvoretsky, S.A. et al. Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy. Semiconductors 55 (Suppl 1), S62–S66 (2021). https://doi.org/10.1134/S1063782621090220

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  • DOI: https://doi.org/10.1134/S1063782621090220

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