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Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Pd–oxide–InP (MOS) structures are fabricated, and their physical and photoelectric properties in a hydrogen atmosphere are investigated. It is established that a decrease in photovoltage of the structure and a large increase in photocurrent in the circuit are observed under the pulsed effect of hydrogen on the structure with a palladium layer illuminated by a light-emitting diode (LED of the wavelength λ = 0.9 μm). The kinetics and mechanism of the variation in the photovoltage and photocurrent are considered. It is assumed that the photovoltage decreases because of the ionization of hydrogen atoms in the Pd layer, and the photocurrent increases due to the thermionic emission of nonequilibrium electrons from the Pd layer into the semiconductor. On the basis of results of the investigations, the sensitive element for an optoelectronic hydrogen sensor is developed.

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. N. Imenkov, E. A. Grebenshchikova, V. A. Shutaev, V. V. Sherstnev & Yu. P. Yakovlev

  2. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    V. A. Shutaev

  3. Russian Institute of Radionavigation and Time, St. Petersburg, 191124, Russia

    A. M. Ospennikov

Authors
  1. A. N. Imenkov
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  2. E. A. Grebenshchikova
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  3. V. A. Shutaev
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  4. A. M. Ospennikov
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  5. V. V. Sherstnev
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  6. Yu. P. Yakovlev
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Corresponding author

Correspondence to E. A. Grebenshchikova.

Additional information

Original Russian Text © A.N. Imenkov, E.A. Grebenshchikova, V.A. Shutaev, A.M. Ospennikov, V.V. Sherstnev, Yu.P. Yakovlev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 7, pp. 946–951.

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Imenkov, A.N., Grebenshchikova, E.A., Shutaev, V.A. et al. Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium. Semiconductors 50, 929–934 (2016). https://doi.org/10.1134/S1063782616070058

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  • DOI: https://doi.org/10.1134/S1063782616070058

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