Abstract
Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100–300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectifying properties of the structures are determined by the potential barrier at the oxide-InP interface with the thermal-tunneling charge transport mechanism. The structures greatly change their characteristics in the presence of hydrogen in the ambient medium.
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Original Russian Text © E.A. Grebenshchikova, V.V. Evstropov, N.D. Il’inskaya, Yu.S. Mel’nikov, O.Yu. Serebrennikova, V.G. Sidorov, V.V. Sherstnev, Yu.P. Yakovlev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 376–378.
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Grebenshchikova, E.A., Evstropov, V.V., Il’inskaya, N.D. et al. Electrical properties of Pd-oxide-InP structures. Semiconductors 49, 364–366 (2015). https://doi.org/10.1134/S1063782615030094
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DOI: https://doi.org/10.1134/S1063782615030094