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Radiation Formation of Interlayer Bridges in Bilayer Graphene

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The radiation formation of interlayer bridges in bilayer graphene has been studied with the nonorthogonal tight binding model. It has been shown that most (~85%) of the formed bridges have a low thermal stability excluding their application in elements of graphene electronics working at room temperature. Three types of stable bridges with the annealing activation energies of 1.50, 1.52, and 2.44 eV have been revealed. Estimates by the Arrhenius formula have shown that these bridge types have macroscopic lifetime at room temperature. It has been found that the radiation formation of bridges in bilayer graphene significantly differs from a similar process in graphite.

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ACKNOWLEDGMENTS

I am grateful to K.P. Katin for discussion of the results.

Funding

This work was supported by of the Ministry of Science and Higher Education of the Russian Federation (program Priority 2030 for National Research Nuclear University MEPhI).

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  1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow, Russia

    A. I. Podlivaev

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Correspondence to A. I. Podlivaev.

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Translated by R. Tyapaev

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Podlivaev, A.I. Radiation Formation of Interlayer Bridges in Bilayer Graphene. Jetp Lett. 117, 462–469 (2023). https://doi.org/10.1134/S0021364023600271

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