Abstract
The effect of millimeter microwave radiation on the electron transport of two-dimensional (2D) ballistic microbars formed on the basis of individual GaAs quantum wells at a temperature of T = 4.2 K in magnetic fields B < 0.6 T has been investigated. Differences have been revealed in the magnetic field dependences of the microwave photoresistance of a 2D electron gas in Hall bars with a length L and a width W for the cases L, W > l p and L, W < l p , where l p is the electron mean free path for momentum. The microwave photoresistance in macroscopic bars (L, W > l p ) is a periodic alternating function of the inverse magnetic field; in microbars (L, W < l p ), it is a periodic positive function of 1/B. The experimental results indicate that the mechanisms of the microwave photoresistance of a 2D electron gas are different for macroscopic and microscopic bars.
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Original Russian Text © A.A. Bykov, 2009, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 89, No. 11, pp. 676–680.