Quantum Transport in Semiconductor Nanostructures

doi:10.1016/S0081-1947(08)60091-0

Solid State Physics

Volume 44, 1991, Pages 1-228

https://doi.org/10.1016/S0081-1947(08)60091-0 Get rights and content

Publisher Summary

Quantum transport is conveniently studied in a two-dimensional electron gas (2DEG) because of the combination of a large Fermi wavelength and large mean free path. Semiconductor nanostructures are unique in offering the possibility of studying quantum transport in an artificial potential landscape. This is the regime of ballistic transport in which scattering with impurities are neglected. The chapter presents a self-contained account of these three novel transport regimes in semiconductor nanostructures. The study of quantum transport in semiconductor nanostructures is motivated by more than scientific interest. The fabrication of nanostructures relies on sophisticated crystal growth and lithographic techniques that exist because of the industrial effort toward the miniaturization of transistors. Conventional transistors operate in the regime of classical diffusive transport, which breaks down on short length scales. The discovery of novel transport regimes in semiconductor nanostructures provides options for the development of innovative future devices.

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Quantum Transport in Semiconductor Nanostructures

Publisher Summary

Acta Electronica

J. Phys. C

J. Vac. Sci. Technol.

J. Phys. C.

Phys. Rev. Lett.

J. Vac. Sci. Technol.

“Stochastic Processes in Physics and Chemistry.”

IBM J. Res. Dev.

Phys. Rev. Lett.

Phys. Rev. Lett.

J. Phys. C

Phys. Rev. Lett.

IBM J. Res. Dev.

“Proceedings of the International Conference on Electronic Properties of Two-Dimensional Systems,” IV-VIII

Surf. Sci.

“The Physics and Fabrication of Microstructures and Microdevices.”

“Physics and Technology of Submicron Structures.”

“Nanostructure Physics and Fabrication.”

“Science and Engineering of 1- and 0- Dimensional Semiconductors.”

Phys. Today

Sci. Am.

Rev. Mod. Phys.

“Physics of Semiconductor Devices.”

“Metal Oxide Semiconductor Technology.”

Phys. Rev. B

Phys. Rev. B

Phys. Rev. B

Appl. Phys. Lett.

Surf. Sci.

Phys. Rev. B

Phys. Rev. Lett.

Phys. Rev. B

Phys. Rev. Lett.

J. Phys. C

IBM J. Res. Dev.

Phys. Rev. B

IBM J. Res. Dev.

Phys. Rev. Lett.

Phys. Rev. Lett.

Phys. Rev. Lett.

Phys. Rev. Lett.

Appl. Phys. Lett.

Appl. Phys. Lett.

Phys. Rev. Lett.

IEEE Electron Device Lett.

Phys. Rev. Lett.

Physica Scripta