Abstract
The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix.
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Original Russian Text © I.A. Aleksandrov, K.S. Zhuravlev, V.G. Mansurov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 191–194.
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Aleksandrov, I.A., Zhuravlev, K.S. & Mansurov, V.G. Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures. Semiconductors 50, 191–194 (2016). https://doi.org/10.1134/S1063782616020020
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DOI: https://doi.org/10.1134/S1063782616020020