Abstract
The measured stationary and time-resolved photoluminescence is used to study the properties of the exciton gas in a second-order 5-nm-thick Si0.905Ge0.095/Si quantum well. It is shown that, despite the presence of an electron barrier in the Si0.905Ge0.095 layer, a spatially indirect biexciton is the most favorable energy state of the electron–hole system at low temperatures. This biexciton is characterized by a lifetime of 1100 ns and a binding energy of 2.0–2.5 meV and consists of two holes localized in the SiGe layer and two electrons mainly localized in silicon. The formation of biexcitons is shown to cause low-temperature (5 K) luminescence spectra over a wide excitation density range and to suppress the formation of an exciton gas, in which quantum statistics effects are significant. The Bose statistics can only be experimentally observed for a biexciton gas at a temperature of 1 K or below because of the high degree of degeneracy of biexciton states (28) and a comparatively large effective mass (about 1.3m e ). The heat energy at such temperatures is much lower than the measured energy of localization at potential fluctuations (about 1 meV). This feature leads to biexciton localization and fundamentally limits the possibility of observation of quantum coherence in the biexciton gas.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Sen Yang, A. T. Hammack, M. M. Fogler, L. V. Butov, and A. C. Gossard, Phys. Rev. Lett. 97, 187402 (2006).
A. A. High, A. T. Hammack, J. R. Leonard, Sen Yang, L. V. Butov, T. Ostatnický, M. Vladimirova, A. V. Kavokin, T. C. H. Liew, K. L. Campman, and A. C. Gossard, Phys. Rev. Lett. 110, 246403 (2013).
A. V. Gorbunov, V. B. Timofeev, D. A. Demin, and A. A. Dremin, JETP Lett. 90 (2), 146 (2009).
A. V. Gorbunov and V. B. Timofeev, JETP Lett. 87 (12), 698 (2008).
K. G. Lagoudakis, M. Wouters, M. Richard, A. Baas, I. Carusotto, R. André, Le Si Dang, and B. Deveaud-Plédran, Nat. Phys. 4, 706 (2008).
P. Bhattacharya, T. Frost, S. Deshpande, M. Z. Baten, A. Hazari, and A. Das, Phys. Rev. Lett. 112, 236802 (2014).
V. V. Belykh, N. N. Sibeldin, V. D. Kulakovskii, M. M. Glazov, M. A. Semina, C. Schneider, S. Höfling, M. Kamp, and A. Forchel, Phys. Rev. Lett. 110, 137402 (2013).
V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev, E. E. Onishchenko, A. A. Pruchkina, D. F. Aminev, M. L. Skorikov, D. N. Lobanov, and A. V. Novikov, J. Exp. Theor. Phys. 117 (5), 912 (2013).
V. S. Bagaev, V. V. Zaitsev, V. S. Krivobok, D. N. Lobanov, S. N. Nikolaev, A. V. Novikov, and E. E. Onishchenko, J. Exp. Theor. Phys. 107 (5), 846 (2008).
C. Penn, F. Schäffler, G. Bauer, and S. Glutsch, Phys. Rev. B: Condens. Matter 59, 13314 (1999).
T. Baier, U. Mantz, K. Thonke, R. Sauer, F. Schäffler, and H.-J. Herzog, Phys. Rev. B: Condens. Matter 50, 15191 (1994).
V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev, E. E. Onishchenko, M. L. Skorikov, A. V. Novikov, and D. N. Lobanov JETP Lett. 94 (1), 63 (2011).
T. M. Burbaev, M. N. Gordeev, D. N. Lobanov, A. V. Novikov, M. M. Rzaev, N. N. Sibeldin, M. L. Skorikov, V. A. Tsvetkov, and D. V. Shepel, JETP Lett. 92 (5), 305 (2010).
V. S. Krivobok, S. N. Nikolaev, V. S. Bagaev, V. S. Lebedev, and E. E. Onishchenko, JETP Lett. 100 (5), 306 (2014).
T. W. Steiner, L. C. Lenchyshyn, M. L. W. Thewalt, J.-P. Noél, N. L. Rowell, and D. C. Houghton, Solid State Commun. 89, 429 (1994).
D. J. Robbins, L. T. Canham, S. J. Barnett, A. D. Pitt, and P. Calcott, J. Appl. Phys. 71, 1407 (1992).
L. C. Lenchyshyn, M. L. W. Thewalt, D. C. Houghton, J.-P. Noél, N. L. Rowell, J. C. Sturm, and X. Xiao, Phys. Rev. B: Condens. Matter 47, 16655 (1992).
L. Yang, J. R. Watling, R. C. W. Wilkins, M. Boriçi, J. R. Barker, A. Asenov, and S. Roy, Semicond. Sci. Technol. 19, 1174 (2004).
S. N. Nikolaev, V. S. Krivobok, A. Yu. Klokov, and V. S. Bagaev, Instrum. Exp. Theor. 52 (1), 110 (2009).
D. J. Robbins, L. T. Canham, S. J. Barnett, A. D. Pitt, and P. Calcott, J. Appl. Phys. 71, (1992).
L. C. Lenchyshyn, M. L. W. Thewalt, and D. C. Houghton, Phys. Rev. B: Condens. Matter 47, 16655 (1993).
T. M. Burbaev, E. A. Bobrik, V. A. Kurbatov, M. M. Rzaev, N. N. Sibel’din, V. A. Tsvetkov, and F. Schäffler, JETP Lett. 85 (7), 331 (2007).
T. M. Burbaev, D. S. Kozyrev, N. N. Sibel’din, and M. L. Skorikov, JETP Lett. 98 (12), 823 (2013).
V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev, A. V. Novikov, E. E. Onishchenko, and M. L. Skorikov, Phys. Rev. B: Condens. Matter 82, 1153131 (2010).
V. D. Kulakovskii and V. B. Timofeev, Solid State Commun. 33, 1187 (1980).
J. Christen and D. Bimberg, Phys. Rev. B: Condens. Matter 42, 7213 (1990).
R. Schorer, G. Abstreiter, S. de Gironcoli, E. Molinari, H. Kibbel, and H. Presting, Phys. Rev. B: Condens. Matter 49, 5406 (1994).
C. Klincshirn, Phys. Status Solidi B 71, 547 (1975).
H. Buttner, Phys. Status Solidi 42, 775 (1970).
V. S. Bagaev, V. V. Zaitsev, Yu. V. Klevkov, and V. S. Krivobok, Phys. Solid State 47 (10), 1827 (2005).
Excitons, Ed. by E. I. Rashba and M. D. Sturge (North- Holland, Amsterdam, The Netherlands, 1982; Nauka, Moscow, 1985).
D. Snoke, Solid State Commun. 146, 73 (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.S. Bagaev, E.T. Davletov, V.S. Krivobok, S.N. Nikolaev, A.V. Novikov, E.E. Onishchenko, A.A. Pruchkina, M.L. Skorikov, 2015, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2015, Vol. 148, No. 6, pp. 1198–1214.
Rights and permissions
About this article
Cite this article
Bagaev, V.S., Davletov, E.T., Krivobok, V.S. et al. Multiparticle states and the factors that complicate an experimental observation of the quantum coherence in the exciton gas of SiGe/Si quantum wells. J. Exp. Theor. Phys. 121, 1052–1066 (2015). https://doi.org/10.1134/S106377611512002X
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106377611512002X