Abstract
The “exciton gas-plasma” transition (the Mott transition) in a Si0.93Ge0.07/Si thin quantum well is investigated using low-temperature photoluminescence. It is demonstrated that this transition is smooth and occurs in the concentration range from approximately 6 × 1010 to 1.2 × 1012 cm−2. At a temperature of 23 K and excitation densities of higher than 10 W/cm2, the shape and location of the luminescence line associated with the electron-hole plasma remain unchanged with an increase in the pump density. This can indicate the occurrence of an “electron-hole gas-liquid” transition. It is shown that, in the spectrum of the quantum well, the luminescence of boron-bound excitons dominates at liquid-helium temperatures and low excitation densities, whereas the free-exciton luminescence dominates at temperatures above 10 K. The influence of the homogeneous and inhomogeneous broadening on the electron-hole plasma and exciton luminescence is discussed.
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Original Russian Text © V.S. Bagaev, V.V. Zaitsev, V.S. Krivobok, D.N. Lobanov, S.N. Nikolaev, A.V. Novikov, E.E. Onishchenko, 2008, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 134, No. 5, pp. 988–995.
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Bagaev, V.S., Zaitsev, V.V., Krivobok, V.S. et al. Channels of radiative recombination and phase transitions in a system of nonequilibrium carriers in a Si0.93Ge0.07/Si thin quantum well. J. Exp. Theor. Phys. 107, 846–853 (2008). https://doi.org/10.1134/S1063776108110150
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DOI: https://doi.org/10.1134/S1063776108110150